Critical thickness of Ge / GaAs(001) epitaxial films
Epitaxial single crystal films of Ge, with thickness from 0.2 to 2.4 µm, were grown on GaAs (001) by rf sputtering. Theselayers were characterized by High Resolution X-Ray Diffraction (HRXRD). Measured rocking curves show thatpseudomorphic samples with good structural quality can be obtained by this...
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| Wydane w: | Superficies y vacío |
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| Główni autorzy: | , , , , |
| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2003
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| Hasła przedmiotowe: | |
| Dostęp online: | https://www.redalyc.org/articulo.oa?id=94216410 |
| Etykiety: |
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