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Growth and characterization of Ge1-xSnx alloys grown by magnetron sputter deposition

Single phase Ge1-xSnx alloys have been grown on Ge(100) and GaAs(100) substrates using a R. F. Sputtering system.Using HRXRD on asymmetrical planes in plane and in growth lattice parameters are obtained. A residual strain due to thedifferences in the linear thermal expansion coefficient between the...

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發表在:Superficies y vacío
Main Authors: H. Pérez Ladrón de Guevara, H. Navarro Contreras, M. A. Vidal
格式: Artigo
語言:Inglês
出版: Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2003
主題:
Ge1
在線閱讀:https://www.redalyc.org/articulo.oa?id=94216405
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