Carbon site switching in carbon doped GaAs, its dependence on carbon concentration
Carbon thermal site switching dependence on carbon and carbon dimers concentration in GaAs layers is studied. The atomiccarbon and dimer concentrations ranged from 0.4 - 2x1020 cm-3 and 0.1-1.5 x1019 cm-3, respectively. The hole concentrationas a function of the annealing time, increases from the a...
Gardado en:
| Publicado en: | Superficies y vacío |
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| Principais autores: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2003
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| Assuntos: | |
| Acceso en liña: | https://www.redalyc.org/articulo.oa?id=94216108 |
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