Optical properties of Er-doped GaN

Optical properties of Er (Erbium)-doped GaN epilayers have been investigated using photoluminescence (PL). Various doses of Er ionswere implanted on GaN epilayers by ion implantation. Sharp visible green emission lines due to inner 4f shell transitions for Er3+ wereobserved from the PL spectrum of E...

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Bibliografiska uppgifter
I publikationen:Revista Mexicana de Física
Huvudupphovsmän: Akihiro Wakahara, Chang-Sik Son, In-Hoon Choi, Seong-Il Kim, Yong Tae Kim, H. Castañeda López, Young-Hwan Kim
Materialtyp: Artigo
Språk:Inglês
Publicerad: Sociedad Mexicana de Física A.C. 2007
Ämnen:
Física, Astronomía y Matemáticas
Er
GaN
implantation
photoluminescence
Länkar:https://www.redalyc.org/articulo.oa?id=57066104
https://www.redalyc.org/journal/570/57066104/
https://www.redalyc.org/journal/570/57066104/html/
https://www.redalyc.org/journal/570/57066104/57066104.epub
https://www.redalyc.org/journal/570/57066104/movil
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