Yüklüyor......

Optical properties of Er-doped GaN

Optical properties of Er (Erbium)-doped GaN epilayers have been investigated using photoluminescence (PL). Various doses of Er ionswere implanted on GaN epilayers by ion implantation. Sharp visible green emission lines due to inner 4f shell transitions for Er3+ wereobserved from the PL spectrum of E...

Ful tanımlama

Kaydedildi:
Detaylı Bibliyografya
Yayımlandı:Revista Mexicana de Física
Asıl Yazarlar: Akihiro Wakahara, Chang-Sik Son, In-Hoon Choi, Seong-Il Kim, Yong Tae Kim, H. Castañeda López, Young-Hwan Kim
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: Sociedad Mexicana de Física A.C. 2007
Konular:
Er
GaN
Online Erişim:https://www.redalyc.org/articulo.oa?id=57066104
https://www.redalyc.org/journal/570/57066104/
https://www.redalyc.org/journal/570/57066104/html/
https://www.redalyc.org/journal/570/57066104/57066104.epub
https://www.redalyc.org/journal/570/57066104/movil
Etiketler: Etiketle
Etiket eklenmemiş, İlk siz ekleyin!