Optical properties of Er-doped GaN

Optical properties of Er (Erbium)-doped GaN epilayers have been investigated using photoluminescence (PL). Various doses of Er ionswere implanted on GaN epilayers by ion implantation. Sharp visible green emission lines due to inner 4f shell transitions for Er3+ wereobserved from the PL spectrum of E...

Popoln opis

Shranjeno v:
Bibliografske podrobnosti
izdano v:Revista Mexicana de Física
Main Authors: Akihiro Wakahara, Chang-Sik Son, In-Hoon Choi, Seong-Il Kim, Yong Tae Kim, H. Castañeda López, Young-Hwan Kim
Format: Artigo
Jezik:Inglês
Izdano: Sociedad Mexicana de Física A.C. 2007
Teme:
Física, Astronomía y Matemáticas
Er
GaN
implantation
photoluminescence
Online dostop:https://www.redalyc.org/articulo.oa?id=57066104
Oznake: Označite
Brez oznak, prvi označite!

Podobne knjige/članki