Optical properties of Er-doped GaN
Optical properties of Er (Erbium)-doped GaN epilayers have been investigated using photoluminescence (PL). Various doses of Er ionswere implanted on GaN epilayers by ion implantation. Sharp visible green emission lines due to inner 4f shell transitions for Er3+ wereobserved from the PL spectrum of E...
Wedi'i Gadw mewn:
| Cyhoeddwyd yn: | Revista Mexicana de Física |
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| Prif Awduron: | , , , , , , |
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
Sociedad Mexicana de Física A.C.
2007
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| Pynciau: | |
| Mynediad Ar-lein: | https://www.redalyc.org/articulo.oa?id=57066104 https://www.redalyc.org/journal/570/57066104/ https://www.redalyc.org/journal/570/57066104/html/ https://www.redalyc.org/journal/570/57066104/57066104.epub https://www.redalyc.org/journal/570/57066104/movil |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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