Optical properties of Er-doped GaN
Optical properties of Er (Erbium)-doped GaN epilayers have been investigated using photoluminescence (PL). Various doses of Er ionswere implanted on GaN epilayers by ion implantation. Sharp visible green emission lines due to inner 4f shell transitions for Er3+ wereobserved from the PL spectrum of E...
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| Vydáno v: | Revista Mexicana de Física |
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| Hlavní autoři: | , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Sociedad Mexicana de Física A.C.
2007
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| Témata: | |
| On-line přístup: | https://www.redalyc.org/articulo.oa?id=57066104 https://www.redalyc.org/journal/570/57066104/ https://www.redalyc.org/journal/570/57066104/html/ https://www.redalyc.org/journal/570/57066104/57066104.epub https://www.redalyc.org/journal/570/57066104/movil |
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