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Restrained relaxation of stress in a MBE-grown thin film of CaF2 on (111) silicon
A rhombohedral symmetry of CaF2, grown by MBE on (111)Si to a thickness of 30 nm was found with the help of RBSand ion channeling measurements. This symmetry is caused by hampered stress relaxation and the build-up of planarstrain of tensile type due to different thermal expansion coefficients of th...
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| Publicat a: | Superficies y vacío |
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| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2002
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=94201510 |
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