Restrained relaxation of stress in a MBE-grown thin film of CaF2 on (111) silicon

A rhombohedral symmetry of CaF2, grown by MBE on (111)Si to a thickness of 30 nm was found with the help of RBSand ion channeling measurements. This symmetry is caused by hampered stress relaxation and the build-up of planarstrain of tensile type due to different thermal expansion coefficients of th...

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Udgivet i:Superficies y vacío
Main Authors: E. Torres Tapia, A. Tempel, A. Zehe, A. Ramírez
Format: Artigo
Sprog:Inglês
Udgivet: Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2002
Fag:
Física, Astronomía y Matemáticas
silicon
Thin films
Heteroepitaxy
Epitaxial growth
Molecular Beam Epitaxy
Online adgang:https://www.redalyc.org/articulo.oa?id=94201510
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