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Intense red emission from an electron-beam excited GaN/Al2O3:Cr epitaxial sandwich structure
We describe a two -step excitation process of a GaN/Al2O3:Cr specimen by a high energetic pulsed electron beam of 30keV. Epitaxial GaN was grown on the (0001) faces of ruby by a metalorganic reaction of GaCl and NH3 with He as acarrier gas. Spinel and ruby are frequently used as substrate materials...
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| Udgivet i: | Superficies y vacío |
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| Main Authors: | , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2001
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| Fag: | |
| Online adgang: | https://www.redalyc.org/articulo.oa?id=94201211 |
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