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Duality MOSPN Junction in the Al/Silicon Rich Oxide/Si Structure as a Radiation Sensor
In this work an experimental investigation on the possibilities of using the induced PN junction as a photon detector in the Al/SRO/Si devices is done. The devices were fabricated on high resistivity silicon substrates, the silicon rich oxide Ro used was 20. The experimental results show that this d...
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| 發表在: | Superficies y vacío |
|---|---|
| Main Authors: | , , , , , |
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| 主題: | |
| 在線閱讀: | https://www.redalyc.org/articulo.oa?id=94200946 |
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