Duality MOS–PN Junction in the Al/Silicon Rich Oxide/Si Structure as a Radiation Sensor

In this work an experimental investigation on the possibilities of using the induced PN junction as a photon detector in the Al/SRO/Si devices is done. The devices were fabricated on high resistivity silicon substrates, the silicon rich oxide Ro used was 20. The experimental results show that this d...

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Bibliographic Details

Published in:	Superficies y vacío
Main Authors:	P. Rosales, C. Falcony, M. Aceves, J. Carrillo, J. Carranza, W. Calleja
Format:	Artigo
Language:	Inglês
Published:	Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 1999
Subjects:	Física, Astronomía y Matemáticas
Online Access:	https://www.redalyc.org/articulo.oa?id=94200946
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