Duality MOSPN Junction in the Al/Silicon Rich Oxide/Si Structure as a Radiation Sensor
In this work an experimental investigation on the possibilities of using the induced PN junction as a photon detector in the Al/SRO/Si devices is done. The devices were fabricated on high resistivity silicon substrates, the silicon rich oxide Ro used was 20. The experimental results show that this d...
Kaydedildi:
| Yayımlandı: | Superficies y vacío |
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| Asıl Yazarlar: | , , , , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Konular: | |
| Online Erişim: | https://www.redalyc.org/articulo.oa?id=94200946 |
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