Growth of AlxGa1¡xAs/GaAs structures for single quantum wells by solid arsenic MOCVD system
The results obtained from the growth and characterization of AlXGa1¡XAs/GaAs multilayer structures by a Metalorganic Chemical VaporDeposition (MOCVD) system based on metallic arsenic are presented. The MOCVD system was adapted in order to be used for thegrowth of quantum wells structures. Our main g...
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| Publicat a: | Revista Mexicana de Física |
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| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedad Mexicana de Física A.C.
2007
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=57053603 |
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