Growth of AlxGa1¡xAs/GaAs structures for single quantum wells by solid arsenic MOCVD system
The results obtained from the growth and characterization of AlXGa1¡XAs/GaAs multilayer structures by a Metalorganic Chemical VaporDeposition (MOCVD) system based on metallic arsenic are presented. The MOCVD system was adapted in order to be used for thegrowth of quantum wells structures. Our main g...
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| Pubblicato in: | Revista Mexicana de Física |
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| Autori principali: | , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Sociedad Mexicana de Física A.C.
2007
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| Soggetti: | |
| Accesso online: | https://www.redalyc.org/articulo.oa?id=57053603 |
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