Growth of AlxGa1¡xAs/GaAs structures for single quantum wells by solid arsenic MOCVD system
The results obtained from the growth and characterization of AlXGa1¡XAs/GaAs multilayer structures by a Metalorganic Chemical VaporDeposition (MOCVD) system based on metallic arsenic are presented. The MOCVD system was adapted in order to be used for thegrowth of quantum wells structures. Our main g...
Gorde:
| Argitaratua izan da: | Revista Mexicana de Física |
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| Egile Nagusiak: | , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Sociedad Mexicana de Física A.C.
2007
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| Gaiak: | |
| Sarrera elektronikoa: | https://www.redalyc.org/articulo.oa?id=57053603 |
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