Optical and electrical characterization of AlxGa1−xAs layers grown on GaAs obtained by a metallic-arsenic-based-MOCVD system
In this work we report results on the optical characterization of AlxGa1−xAs epitaxial layers. The layers were characterized using photoluminescence (PL) to 10 K and photoreflectance (PR) to 300 K. The AlxGa1−xAs layers resulted n-type with an electron concentration of 1×1017 cm−3 and a correspondin...
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| Publicat a: | Revista Mexicana de Física |
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| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedad Mexicana de Física A.C.
2007
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=57036163058 |
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