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One step a-Si:H TFT’S with PECVD SiOx Ny gate insulator
Amorphous silicon thin film transistors (TFT's), utilizing silicon dioxide (SiO2), silicon oxynitride (SiOxNy) and silicon nitride (Si3N4) obtained by PECVD as gate insulating material, are fabricated through just one masking process and characterized by drain current vs drain voltage and by dr...
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| Pubblicato in: | Revista Mexicana de Física |
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| Autori principali: | , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Sociedad Mexicana de Física A.C.
2006
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| Soggetti: | |
| Accesso online: | https://www.redalyc.org/articulo.oa?id=57028295025 |
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