One step a-Si:H TFT’S with PECVD SiOx Ny gate insulator
Amorphous silicon thin film transistors (TFT's), utilizing silicon dioxide (SiO2), silicon oxynitride (SiOxNy) and silicon nitride (Si3N4) obtained by PECVD as gate insulating material, are fabricated through just one masking process and characterized by drain current vs drain voltage and by drain c...
Shranjeno v:
| izdano v: | Revista Mexicana de Física |
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| Principais autores: | , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Sociedad Mexicana de Física A.C.
2006
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| Teme: | |
| Online dostop: | https://www.redalyc.org/articulo.oa?id=57028295025 |
| Oznake: |
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