Hydrogen Influence on Gallium Arsenide Thin Films Prepared by RF-Magnetron Sputtering Technique
We investigate the effect of the hydrogen intentional incorporation on the structural properties of the amorphousgallium arsenide prepared by rf-magnetron sputtering technique. The properties of the non-hydrogenatedfilms are: band gap of 1.4 eV (E04), Urbach energy of 110 meV, stoichiometric composi...
Wedi'i Gadw mewn:
| Cyhoeddwyd yn: | Brazilian Journal of Physics |
|---|---|
| Prif Awduron: | , , |
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
Sociedade Brasileira de Física
2006
|
| Pynciau: | |
| Mynediad Ar-lein: | https://www.redalyc.org/articulo.oa?id=46436563 |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
|