Hydrogen Influence on Gallium Arsenide Thin Films Prepared by RF-Magnetron Sputtering Technique
We investigate the effect of the hydrogen intentional incorporation on the structural properties of the amorphousgallium arsenide prepared by rf-magnetron sputtering technique. The properties of the non-hydrogenatedfilms are: band gap of 1.4 eV (E04), Urbach energy of 110 meV, stoichiometric composi...
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| Veröffentlicht in: | Brazilian Journal of Physics |
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| Hauptverfasser: | , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Sociedade Brasileira de Física
2006
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| Online-Zugang: | https://www.redalyc.org/articulo.oa?id=46436563 |
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