Structural, optical and morphological properties of InxGa1-xAs layers o btained by RF magnetron sputtering
Indium gallium arsenide layers (In x Ga 1 - x As) were prepared on Silicon (100) and glass substrates in an argon atmosphere by R.F. magnetron sputtering. The growth temperature was 580 °C and high purity targets of gallium arsenide and indium were used. The effects due to the RF power for the In...
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| Vydáno v: | Superficies y vacío |
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| Hlavní autoři: | , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2016
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| Témata: | |
| On-line přístup: | https://www.redalyc.org/articulo.oa?id=94246523001 |
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