Hydrogen Influence on Gallium Arsenide Thin Films Prepared by RF-Magnetron Sputtering Technique
We investigate the effect of the hydrogen intentional incorporation on the structural properties of the amorphousgallium arsenide prepared by rf-magnetron sputtering technique. The properties of the non-hydrogenatedfilms are: band gap of 1.4 eV (E04), Urbach energy of 110 meV, stoichiometric composi...
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| Publicat a: | Brazilian Journal of Physics |
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| Autors principals: | , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedade Brasileira de Física
2006
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=46436563 |
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