Structural, optical and morphological properties of InxGa1-xAs layers o btained by RF magnetron sputtering
Indium gallium arsenide layers (In x Ga 1 - x As) were prepared on Silicon (100) and glass substrates in an argon atmosphere by R.F. magnetron sputtering. The growth temperature was 580 °C and high purity targets of gallium arsenide and indium were used. The effects due to the RF power for the In...
Salvato in:
| Pubblicato in: | Superficies y vacío |
|---|---|
| Autori principali: | , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2016
|
| Soggetti: | |
| Accesso online: | https://www.redalyc.org/articulo.oa?id=94246523001 |
| Tags: |
Nessun Tag, puoi essere il primo ad aggiungerne!!
|