SnO2 Extended Gate Field-Effect Transistor as pH Sensor

Extended gate field-effect transistor (EGFET) is a device composed of a conventional ion-sensitive electrodeand a MOSFET device, which can be applied to the measurement of ion content in a solution. This structurehas a lot of advantages as compared to the Ion- Sensitive Field Effect Transistor (ISFE...

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Publicat a:Brazilian Journal of Physics
Autors principals: P. D. Batista, C. F. de O. Graeff, F. J. R. Fernandez, F. das C. Marques, M. Mulato
Format: Artigo
Idioma:Inglês
Publicat: Sociedade Brasileira de Física 2006
Matèries:
Física, Astronomía y Matemáticas
SnO2
pH sensor
effect transistor
Extended gate field
Accés en línia:https://www.redalyc.org/articulo.oa?id=46436366
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