SnO Nanosheet Transistor with Remarkably High Hole Effective Mobility and More than Six Orders of Magnitude On-Current/Off-Current
Using novel SiO<sub>2</sub> surface passivation and ultraviolet (UV) light anneal, a 12 nm thick SnO p-type FET (pFET) shows hole effective mobilities (µ<sub>eff</sub>) of more than 100 cm<sup>2</sup>/V·s and 31.1 cm<sup>2</sup>/V·s at hole densities (Q<sub>h</sub>) of 1 × 10<sup>11</sup> and 5 × 10...
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI AG
2025-04-01
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| Edice: | Nanomaterials |
| Témata: | |
| On-line přístup: | https://www.mdpi.com/2079-4991/15/9/640 |
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