SnO2 Extended Gate Field-Effect Transistor as pH Sensor
Extended gate field-effect transistor (EGFET) is a device composed of a conventional ion-sensitive electrodeand a MOSFET device, which can be applied to the measurement of ion content in a solution. This structurehas a lot of advantages as compared to the Ion- Sensitive Field Effect Transistor (ISFE...
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| Vydáno v: | Brazilian Journal of Physics |
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| Hlavní autoři: | , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Sociedade Brasileira de Física
2006
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| Témata: | |
| On-line přístup: | https://www.redalyc.org/articulo.oa?id=46436366 |
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