Variable Range Hopping Conduction in Low-Temperature Molecular Beam Epitaxy GaAs

Electric transport properties measured by Van der Pauw resistivity experiments of Low-Temperature MolecularBeam Epitaxy (LT-MBE) GaAs samples are used to identify a method to improve the resistivity of GaAsmaterial. We present results on five samples grown at 265, 310, 315, 325, and 345 oC. The elec...

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Publicat a:Brazilian Journal of Physics
Autors principals: C. P. L Rubinger, R.M. Rubinger, H.A. Albuquerque, R. L. da Silva, A. G. de Oliveira, G.M. Ribeiro, W. N. Rodrigues, M. V. B. Moreira
Format: Artigo
Idioma:Inglês
Publicat: Sociedade Brasileira de Física 2006
Matèries:
Física, Astronomía y Matemáticas
GaAs
Variable range hopping
Resistivity measurements
Accés en línia:https://www.redalyc.org/articulo.oa?id=46436304
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