Variable Range Hopping Conduction in Low-Temperature Molecular Beam Epitaxy GaAs

Electric transport properties measured by Van der Pauw resistivity experiments of Low-Temperature MolecularBeam Epitaxy (LT-MBE) GaAs samples are used to identify a method to improve the resistivity of GaAsmaterial. We present results on five samples grown at 265, 310, 315, 325, and 345 oC. The elec...

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Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Cyhoeddwyd yn:Brazilian Journal of Physics
Prif Awduron: C. P. L Rubinger, R.M. Rubinger, H.A. Albuquerque, R. L. da Silva, A. G. de Oliveira, G.M. Ribeiro, W. N. Rodrigues, M. V. B. Moreira
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: Sociedade Brasileira de Física 2006
Pynciau:
Física, Astronomía y Matemáticas
GaAs
Variable range hopping
Resistivity measurements
Mynediad Ar-lein:https://www.redalyc.org/articulo.oa?id=46436304
Tagiau: Ychwanegu Tag
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