Hall Effect Measurements on p-n-p InP Structures
The electrical properties of p-type layers of indium phosphide (InP), formed by the diffusion of zinc into n-type material, are studied by Hall Effect measurements. A wide range of diffusion conditions are used and both homogeneously doped specimens and those containing a zinc atom concentration gra...
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| Опубликовано в:: | Brazilian Journal of Physics |
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| Главные авторы: | , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Sociedade Brasileira de Física
2008
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| Предметы: | |
| Online-ссылка: | https://www.redalyc.org/articulo.oa?id=46413551027 |
| Метки: |
Нет меток, Требуется 1-ая метка записи!
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