Hall Effect Measurements on p-n-p InP Structures
The electrical properties of p-type layers of indium phosphide (InP), formed by the diffusion of zinc into n-type material, are studied by Hall Effect measurements. A wide range of diffusion conditions are used and both homogeneously doped specimens and those containing a zinc atom concentration gra...
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| Gepubliceerd in: | Brazilian Journal of Physics |
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| Hoofdauteurs: | , |
| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
Sociedade Brasileira de Física
2008
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| Onderwerpen: | |
| Online toegang: | https://www.redalyc.org/articulo.oa?id=46413551027 |
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