Evidence of the Miniband Formation in InGaAs/InP Superlattices
The formation of the miniband electron energy structure was explored in doped InGaAs=InP superlatticeswith different periods. The analysis of the Raman data allowed us to conclude that in spite of the defect structureof the layers constituting the superlattices, their super-periodicity was well defi...
שמור ב:
| הוצא לאור ב: | Brazilian Journal of Physics |
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| Principais autores: | , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Sociedade Brasileira de Física
2006
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| נושאים: | |
| גישה מקוונת: | https://www.redalyc.org/articulo.oa?id=46436528 |
| תגים: |
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