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Evidence of the Miniband Formation in InGaAs/InP Superlattices

The formation of the miniband electron energy structure was explored in doped InGaAs=InP superlatticeswith different periods. The analysis of the Raman data allowed us to conclude that in spite of the defect structureof the layers constituting the superlattices, their super-periodicity was well defi...

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Bibliografiske detaljer
Udgivet i:Brazilian Journal of Physics
Principais autores: Yu. A. Pusep, A. de Giovanni Rodrigues, J. C. Galzerani, D. Comedi, R. R. LaPierre
Format: Artigo
Sprog:Inglês
Udgivet: Sociedade Brasileira de Física 2006
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Online adgang:https://www.redalyc.org/articulo.oa?id=46436528
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