Analysis of SiO2 Thin Films Deposited by PECVD Using an Oxygen-TEOS-Argon Mixture
This study analyses the influence of the argon flow on the Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon oxide thin films by using TEOS as silicon source. The argon flow increases the deposition rate, however it also can creates some defects in the deposited film. Several characteriza...
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| Yayımlandı: | Brazilian Journal of Physics |
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| Asıl Yazarlar: | , , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Sociedade Brasileira de Física
2001
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| Konular: | |
| Online Erişim: | https://www.redalyc.org/articulo.oa?id=46413501023 |
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