Analysis of SiO2 Thin Films Deposited by PECVD Using an Oxygen-TEOS-Argon Mixture

This study analyses the influence of the argon flow on the Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon oxide thin films by using TEOS as silicon source. The argon flow increases the deposition rate, however it also can creates some defects in the deposited film. Several characteriza...

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Bibliografische Detailangaben

Veröffentlicht in:	Brazilian Journal of Physics
Hauptverfasser:	Carlos E. Viana, Ana N. R. da Silva, Nilton I. Morimoto, Olivier Bonnaud
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Sociedade Brasileira de Física 2001
Schlagworte:	Física, Astronomía y Matemáticas
Online-Zugang:	https://www.redalyc.org/articulo.oa?id=46413501023
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