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Mechanism of Electron-Beam Manipulation of Single-Dopant Atoms in Silicon
[Image: see text] The precise positioning of dopant atoms within bulk crystal lattices could enable novel applications in areas including solid-state sensing and quantum computation. Established scanning probe techniques are capable tools for the manipulation of surface atoms, but at a disadvantage...
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| Publicat a: | J Phys Chem C Nanomater Interfaces |
|---|---|
| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
American Chemical
Society
2021
|
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8327312/ https://ncbi.nlm.nih.gov/pubmed/34354792 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acs.jpcc.1c03549 |
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