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Time-resolved single dopant charge dynamics in silicon

As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations of conventional devices, such information enables identification of new device concepts. Investigating single...

पूर्ण विवरण

में बचाया:
ग्रंथसूची विवरण
में प्रकाशित:Nat Commun
मुख्य लेखकों: Rashidi, Mohammad, Burgess, Jacob A. J., Taucer, Marco, Achal, Roshan, Pitters, Jason L., Loth, Sebastian, Wolkow, Robert A.
स्वरूप: Artigo
भाषा:Inglês
प्रकाशित: Nature Publishing Group 2016
विषय:
ऑनलाइन पहुंच:https://ncbi.nlm.nih.gov/pmc/articles/PMC5095180/
https://ncbi.nlm.nih.gov/pubmed/27782125
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms13258
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