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Time-resolved single dopant charge dynamics in silicon
As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations of conventional devices, such information enables identification of new device concepts. Investigating single...
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| Publicado no: | Nat Commun |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5095180/ https://ncbi.nlm.nih.gov/pubmed/27782125 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms13258 |
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