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Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC
Several aspects such as the growth relation between the layers of the GaN/AlN/SiC heterostructure, the consistency of the interfaces, and elemental diffusion are achieved by High Resolution Transmission Electron Microscopy (HR-TEM). In addition, the dislocation densities together with the defect cor...
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| Publicado en: | Nanomaterials (Basel) |
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| Autores principales: | , , , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8156561/ https://ncbi.nlm.nih.gov/pubmed/34069169 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11051299 |
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