High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

In this article, we demonstrated novel methods to improve the performance of p-i-n photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a mesa diameter of 10 μm, the dark current at −1 V is 2.5 nA, which is 2.6-fold lower than that of the Ge PD processed on Si substrat...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Publicado no:Nanomaterials (Basel)
Main Authors: Zhao, Xuewei, Wang, Guilei, Lin, Hongxiao, Du, Yong, Luo, Xue, Kong, Zhenzhen, Su, Jiale, Li, Junjie, Xiong, Wenjuan, Miao, Yuanhao, Li, Haiou, Guo, Guoping, Radamson, Henry H.
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2021
Assuntos:
Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC8145456/
https://ncbi.nlm.nih.gov/pubmed/33925305
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11051125
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!

Registos relacionados