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High Performance p-i-n Photodetectors on Ge-on-Insulator Platform
In this article, we demonstrated novel methods to improve the performance of p-i-n photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a mesa diameter of 10 μm, the dark current at −1 V is 2.5 nA, which is 2.6-fold lower than that of the Ge PD processed on Si substrat...
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| Publicat a: | Nanomaterials (Basel) |
|---|---|
| Autors principals: | , , , , , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2021
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8145456/ https://ncbi.nlm.nih.gov/pubmed/33925305 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11051125 |
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