Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs

In this manuscript, the integration of a strained Ge channel with Si-based FinFETs was investigated. The main focus was the preparation of high-aspect-ratio (AR) fin structures, appropriate etching topography and the growth of germanium (Ge) as a channel material with a highly compressive strain. Tw...

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Detalhes bibliográficos
Main Authors: Buqing Xu, Guilei Wang, Yong Du, Yuanhao Miao, Yuanyuan Wu, Zhenzhen Kong, Jiale Su, Ben Li, Jiahan Yu, Henry H. Radamson
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2022-04-01
Colecção:Nanomaterials
Assuntos:
CMOS
FinFETs
Ge selective epitaxy
compressive strain
Acesso em linha:https://www.mdpi.com/2079-4991/12/9/1403
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