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Three dimensional simulation of short channel effects in junction less FinFETs
Abstract In this article, n‐channel junction‐less transistors (JLTs) with gate lengths in the range of 20–250 nm, having crystalline‐silicon (c‐Si) and polycrystalline‐silicon (poly‐Si) channels are characterized for the short channel effects (SCEs). The shift of the threshold voltage with the gate...
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| Main Authors: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Wiley
2022-05-01
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| Colecção: | Engineering Reports |
| Assuntos: | |
| Acesso em linha: | https://doi.org/10.1002/eng2.12481 |
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