Strained Si(0.2)Ge(0.8)/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

With the development of new designs and materials for nano-scale transistors, vertical Gate-All-Around Field Effect Transistors (vGAAFETs) with germanium as channel materials have emerged as excellent choices. The driving forces for this choice are the full control of the short channel effect and th...

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Publicado no:Nanomaterials (Basel)
Main Authors: Xie, Lu, Zhu, Huilong, Zhang, Yongkui, Ai, Xuezheng, Wang, Guilei, Li, Junjie, Du, Anyan, Kong, Zhenzhen, Yin, Xiaogen, Li, Chen, Zhao, Liheng, Li, Yangyang, Jia, Kunpeng, Li, Ben, Radamson, Henry H.
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2020
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7559900/
https://ncbi.nlm.nih.gov/pubmed/32872556
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10091715
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