60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes

A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of V(F) with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The structure’s layout p...

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Publicado en:Sensors (Basel)
Autores principales: Pascu, Razvan, Pristavu, Gheorghe, Brezeanu, Gheorghe, Draghici, Florin, Godignon, Philippe, Romanitan, Cosmin, Serbanescu, Matei, Tulbure, Adrian
Formato: Artigo
Lenguaje:Inglês
Publicado: MDPI 2021
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Article
Acceso en línea:https://ncbi.nlm.nih.gov/pmc/articles/PMC7866971/
https://ncbi.nlm.nih.gov/pubmed/33572603
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s21030942
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