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60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes
A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of V(F) with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The structure’s layout p...
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| Publicado no: | Sensors (Basel) |
|---|---|
| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2021
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7866971/ https://ncbi.nlm.nih.gov/pubmed/33572603 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s21030942 |
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