60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes

A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of V(F) with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The structure’s layout p...

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Dettagli Bibliografici
Pubblicato in:Sensors (Basel)
Autori principali: Pascu, Razvan, Pristavu, Gheorghe, Brezeanu, Gheorghe, Draghici, Florin, Godignon, Philippe, Romanitan, Cosmin, Serbanescu, Matei, Tulbure, Adrian
Natura: Artigo
Lingua:Inglês
Pubblicazione: MDPI 2021
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Article
Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC7866971/
https://ncbi.nlm.nih.gov/pubmed/33572603
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s21030942
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