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400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments
This paper presents a high-temperature probe suitable for operating in harsh industrial applications as a reliable alternative to low-lifespan conventional solutions, such as thermocouples. The temperature sensing element is a Schottky diode fabricated on 4H-SiC wafers, with Ni as the Schottky metal...
Αποθηκεύτηκε σε:
| Τόπος έκδοσης: | Sensors (Basel) |
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| Κύριοι συγγραφείς: | , , , , , , |
| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
MDPI
2019
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| Θέματα: | |
| Διαθέσιμο Online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6567275/ https://ncbi.nlm.nih.gov/pubmed/31137664 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s19102384 |
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