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400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments
This paper presents a high-temperature probe suitable for operating in harsh industrial applications as a reliable alternative to low-lifespan conventional solutions, such as thermocouples. The temperature sensing element is a Schottky diode fabricated on 4H-SiC wafers, with Ni as the Schottky metal...
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| Publicat a: | Sensors (Basel) |
|---|---|
| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6567275/ https://ncbi.nlm.nih.gov/pubmed/31137664 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s19102384 |
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