The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm(2)

Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1–4 cm(2) were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/UV-light. A linear energy response to alpha...

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Pubblicato in:Sensors (Basel)
Autori principali: Liu, Lin-Yue, Wang, Ling, Jin, Peng, Liu, Jin-Liang, Zhang, Xian-Peng, Chen, Liang, Zhang, Jiang-Fu, Ouyang, Xiao-Ping, Liu, Ao, Huang, Run-Hua, Bai, Song
Natura: Artigo
Lingua:Inglês
Pubblicazione: MDPI 2017
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Article
Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC5677359/
https://ncbi.nlm.nih.gov/pubmed/29027944
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s17102334
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