Development of High voltage 4H-SiC Junction Barrier Schottky Diode with 3 300 V Blocking Voltage
In order to meet the demands of high-voltage SiC diodes in railway traction, different gate parameters were applied to the active area of 4H-SiC device and their effects on device performance were comparatively analyzed through TCAD simulation. The junction termination extension (JTE) structures us...
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| Asıl Yazarlar: | , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Chinês |
| Baskı/Yayın Bilgisi: |
Editorial Office of Control and Information Technology
2016-01-01
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| Seri Bilgileri: | Kongzhi Yu Xinxi Jishu |
| Konular: | |
| Online Erişim: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.200 |
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