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Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode

This paper presents a structure for designing Junction Termination Extension (JTE) in Silicon Carbide (SiC) power devices, particularly for Schottky Barrier Diodes (SBD). The P-type island composite multi-step JTE configuration has been developed by optimizing the number, length, and thickness of JT...

Whakaahuatanga katoa

I tiakina i:
Ngā kaituhi matua: Xinyu Wang, Ming Li, Fanpeng Zeng, Bin Zhang, Lei Ge, Yingxin Cui, Mingsheng Xu, Yu Zhong, Kuan Yew Cheong, Xiaobo Hu, Xiangang Xu, Jisheng Han
Hōputu: Artigo
Reo:Inglês
I whakaputaina: Elsevier 2024-07-01
Rangatū:Results in Physics
Ngā marau:
Silicon carbide
4H-SiC
Schottky barrier diodes
Multi-step JTE
Electric field
Urunga tuihono:http://www.sciencedirect.com/science/article/pii/S2211379724004832
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