Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode
This paper presents a structure for designing Junction Termination Extension (JTE) in Silicon Carbide (SiC) power devices, particularly for Schottky Barrier Diodes (SBD). The P-type island composite multi-step JTE configuration has been developed by optimizing the number, length, and thickness of JT...
Kaydedildi:
| Asıl Yazarlar: | , , , , , , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Elsevier
2024-07-01
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| Seri Bilgileri: | Results in Physics |
| Konular: | |
| Online Erişim: | http://www.sciencedirect.com/science/article/pii/S2211379724004832 |
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